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https://doi.org/10.62836/iaet.v2i1.201
Chen, X., & Zhang, H. . . (2023). Performance Enhancement of AlGaN-based Deep Ultraviolet Light-emitting Diodes with AlxGa1-xN Linear Descending Layers. Innovations in Applied Engineering and Technology, 2(1), 1–10. https://doi.org/10.62836/iaet.v2i1.201
Volume 2, Issue 1

Performance Enhancement of AlGaN-based Deep Ultraviolet Light-emitting Diodes with AlxGa1-xN Linear Descending Layers

In this work, the optical performance of AlGaN-based deep ultraviolet light-emitting diode (DUV LED) with AlxGa1-xN linear descending layers has been investigated. The calculated results indicate that the novel DUV LED has better internal quantum efficiency and higher light output power compared with conventional DUV LED. These improvements are attributed to the design of AlxGa1-xN linear descending layers, including n-type layer (NTL), linear Al-composition graded (LACG) quantum barriers (QBs) and hole suply layer (HSL)，which induces more electrons and holes to flow into the active region, and decreases the electron leakage, thus improving the carrier concentrations in the quantum wells (QWs) and enhancing the radiation recombination rate of LED.

DUV LED; AlxGa1-xN; linear descending layers; internal quantum efficiency

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Supporting Agencies

  1. Funding: Not applicable.